SIO₂-SI₃N₄-KOMBINATIONSSCHICHTEN AUF GERMANIUM = COUCHES SIO₂-SI₃N₄ SUR GESCHIPANSKI D.1973; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 1; PP. 25-27; BIBL. 12 REF.Serial Issue

Analytical model and temperature dependence of the thin film SOI FETSCHEINERT, S; PAASCH, G; SCHIPANSKI, D et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 949-959, issn 0038-1101Article

Entuurfsvorschlag für einen integrierfähigen Feldeffekttransistor bis 200 V Durchbruchspannung = Conception d'un transistor à effet de champ intégrable à tension de claquage pouvant atteindre 200 V = Design proposal for an integrable field effects transistor up to 200 V breakdown voltageSCHIPANSKI, D; SCHMIDT, J; DJERMANON, I et al.Nachrichtentechnik. Elektronik. 1985, Vol 35, Num 5, pp 184-185, issn 0323-4657Article

The capacitively controlled field effect transistor (CCFET) as a new low power gas sensorGERGINTSCHEW, Z; KORNETZKY, P; SCHIPANSKI, D et al.Sensors and actuators. B, Chemical. 1996, Vol 36, Num 1-3, pp 285-289, issn 0925-4005Conference Paper

Investigation of MIS gas sensitive structures with Pd and Pd/Cu metal layersLITOVCHENKO, V. G; GORBANYUK, T. I; EFREMOV, A. A et al.Sensors and actuators. A, Physical. 1999, Vol 74, Num 1-3, pp 233-236, issn 0924-4247Conference Paper

Two-dimensional numerical simulation of semiconductor gas sensorsGERGINTSCHEW, Z; FÖRSTER, H; KOSITZA, J et al.Sensors and actuators. B, Chemical. 1995, Vol 26, Num 1-3, pp 170-173, issn 0925-4005Conference Paper

Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistorsGERGINTSCHEW, Z; SCHIPANSKI, D; KORNETZKY, P et al.Sensors and actuators. B, Chemical. 1993, Vol 12, Num 3, pp 231-235, issn 0925-4005Article